1998. 6. 15
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SEMICONDUCTOR
TECHNICAL DATA
KN4402S/4403S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Complementary to the KN4400S/4401S
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
Type Name
Marking
Lot No.
ZVA
Type Name
Lot No.
ZWA
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-600
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
MARK
KN4402S
ZVA
KN4403S
ZWA
MARK SPEC
1998. 6. 15
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KN4402S/4403S
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CEX
V
CE
=-35V, V
EB
=-0.4V
-
-
-100
nA
Collector Cut-off Current
I
CBO
V
CB
=-40V, I
E
=0
-
-
-100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-100 A, I
E
=0
-40
-
-
V
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
I
C
=-1mA, I
B
=0
-40
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-100 A, I
C
=0
-5
-
-
V
DC Current Gain *
KN4403S
h
FE
(1)
V
CE
=-1V, I
C
=-0.1mA
30
-
-
KN4402S
h
FE
(1)
V
CE
=-1V, I
C
=-1mA
30
-
-
KN4403S
h
FE
(2)
60
-
-
KN4402S
h
FE
(2)
V
CE
=-1V, I
C
=-10mA
50
-
-
KN4403S
h
FE
(3)
100
-
-
KN4402S
h
FE
(3)
V
CE
=-2V, I
C
=-150mA
50
-
150
KN4403S
h
FE
(4)
100
-
300
KN4402S
h
FE
(4)
V
CE
=-2V, I
C
=-500mA
20
-
-
KN4403S
h
FE
(5)
20
-
-
Collector-Emitter Saturation Voltage *
V
CE(sat)
1
I
C
=-150mA, I
B
=-15mA
-
-
-0.4
V
V
CE(sat)
2
I
C
=-500mA, I
B
=-50mA
-
-
-0.75
Base-Emitter Saturation Voltage *
V
BE(sat)
1
I
C
=-150mA, I
B
=-15mA
-0.75
-
-0.95
V
V
BE(sat)
2
I
C
=-500mA, I
B
=-50mA
-
-
-1.3
Transition Frequency
f
T
V
CE
=-10V, I
C
=-20mA f=100MHz
200
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
-
8.5
pF
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